| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) for an LCD(Liquid Crystal Display) integrated driving circuit and a manufacturing method thereof are provided to form a gate electrode with double or threefold structure, thereby preventing break of insulation between gate and active layers due to a structural defect by a laser activation process after doping. CONSTITUTION: A buffer layer(105) is formed on the entire surface of an insulation substrate(100). A semiconductor layer(110) comprised of an n type ohmic contact layer(110c), an LDD(Lightly Doped Drain) layer(110b) and an active layer(110a) is formed on the buffer layer(105). A gate insulation film(115) and a gate electrode(120) having a threefold structure are formed on the semiconductor layer(110). An interlayer insulation film(130) including semiconductor layer contact holes(133a,133b) is formed on an upper portion of the gate electrode(120). Source and drain electrodes(140a,140b) are formed on the interlayer insulation film(130) and contacted with the semiconductor layer(110) through the contact holes(133a,133b). A passivation layer(150) including a drain electrode hole(155) is formed on an upper portion of the drain electrode(140b). A pixel electrode(160) is formed on an upper portion of the passivation layer(150) and contacted with the drain electrode(140b) through the drain electrode hole(155).
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