High breakdown voltage semiconductor device,申请号EP20020001150-传众专利搜索

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发明名称	High breakdown voltage semiconductor device
摘要
申请公布号	EP1227522(A3)	申请公布日期	2004.06.30
申请号	EP20020001150	申请日期	2002.01.25
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	INOUE, TOMOKI
分类号	H01L27/04;H01L29/06;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/739	主分类号	H01L27/04
代理机构		代理人
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