| 摘要 |
A PROCESS FOR PRODUCING SEMICONDUCTOR CHIPS (4), -COMPRISING THE FOLLOWING STEPS. A SEMICONDUCTOR WAFER (1) HAVING A SURFACE OVERLAID WITH CIRCUITS IS PROVIDED. AN ARRANGEMENT WHEREIN A BACK OF THE SEMICONDUCTOR WAFER (1) IS FIXED ON A DICING TAPE (2) AND WHEREIN A PRESSURE SENSITIVE ADHESIVE DOUBLE COATED SHEET (10) IS STUCK TO A CIRCUIT SURFACE OF THE SEMICONDUCTOR WAFER (1) IS FORMED. THE PRESSURE SENSITIVE ADHESIVE DOUBLE COATED SHEET (10) COMPRISES A SHRINKABLE BASE (11) HAVING ITS BOTH SIDES OVERLAID WITH PRESSURE SENSITIVE ADHESIVE LAYERS (I2A,I2B). AT LEAST ONE OF THE LAYERS (I2A,I2B) IS COMPOSED OF AN ENERGY RADIATION CURABLE PRESSURE SENSITIVE ADHESIVE. THE SEMICONDUCTOR WAFER (1) TOGETHER WITH THE PRESSURE SENSITIVE ADHESIVE DOUBLE COATED SHEET (10) IS DICED BY EACH CIRCUIT TO THEREBY FORM SEMICONDUCTOR CHIPS (4). THE SEMICONDUCTOR CHIPS (4) ARE FIXED ON A TRANSPARENT HARD PLATE (5) BY ADHERENCE OF THE PRESSURE SENSITIVE ADHESIVE LAYER (I2B) OF THE PRESSURE SENSITIVE ADHESIVE DOUBLE COATED SHEET (10) REMOTE FROM THE SEMICONDUCTOR CHIPS (4). THE DICING TAPE (2) IS STRIPPED FROM THE SEMICONDUCTOR CHIPS (4). THE PRESSURE SENSITIVE ADHESIVE DOUBLE COATED SHEET (10), ON ITS TRANSPARENT HARD PLATE (5) SIDE, IS IRRADIATED WITH ENERGY RADIATION. THE SHRINK BASE OF THE PRESSURE SENSITIVEADHESIVE DOUBLE COATED SHEET (10) IS SHRUNK, AND THE SEMICONDUCTOR CHIPS (4) ARE PICKED UP. IN THE WORKING OF A SEMICONDUCTOR WAFER (1) INTO EXTREMELY REDUCED THICKNESS, SEMICONDUCTOR CHIPS (4) CAN BE PRODUCED WITH HIGH YIELD WITHOUT SUFFERING FROM DAMAGING OF SEMICONDUCTOR CHIPS (4) SUCH AS CHIP SPLITTING OR CRACKING.
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