| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent a void from being formed by using a diffusion barrier layer as transition metal and its oxide or nitride material that has adhesion better than that of SiC or SiN. CONSTITUTION: The first interlayer dielectric(12) is formed on a semiconductor substrate(11) having a predetermined structure. A predetermined region of the first interlayer dielectric is etched to form a damascene pattern. The first copper layer(13) is formed to fill the damascene pattern so that a lower interconnection is formed. The first diffusion barrier layer(14) is formed on the lower interconnection. The second interlayer dielectric(15) is formed on the resultant structure and is etched by a predetermined region to form a damascene pattern exposing the first diffusion barrier layer. A plasma process is performed to clean the damascene pattern while the first diffusion barrier layer is re-sputtered to form the second diffusion barrier layer(16) on the sidewall of the damascene pattern. After the third diffusion barrier layer and a seed layer are formed on the resultant structure, the second copper layer is formed to fill the damascene pattern. The second copper layer and the third diffusion barrier layer are polished to form an upper interconnection.
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