METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY SILICIDE PROCESS

摘要

PURPOSE: A method for fabricating a semiconductor device by a silicide process is provided to prevent a gate electrode and a source/drain region from being short-circuited by preventing conductive residue from being generated by a silicide process. CONSTITUTION: A gate electrode(34), a source region(40) and a drain region(38) are formed on a semiconductor substrate(30). After the first refractory metal layer is formed on the gate electrode, a heat treatment process is performed to form the first refractory metal silicide layer. An interlayer dielectric(44) is formed on the resultant structure. A contact hole penetrates the interlayer dielectric to expose the source region and the drain region. After the second refractory metal layer is formed only on the bottom of the inside of the contact hole of the exposed source/drain region, a heat treatment process is performed to form the second refractory metal silicide layer. A contact hole penetrates the interlayer dielectric to expose the gate electrode. A conductive material is filled in the contact holes that expose the source or drain region and the gate electrode so that a source/drain contact(DC) and a gate contact(GC) are formed.