| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to simplify a fabricating process and reduce a cell area by forming a capacitor while using one metal layer. CONSTITUTION: The first insulation material layer is formed on a lower metal layer(21) and is selectively etched to form the first insulation pattern layer(22a) with via holes of different sizes. A material layer for forming a plug is formed and etched back to be left in the via holes so that the plug and a lower electrode(24a) of the capacitor are formed. The second insulation material layer is formed on the resultant structure and is left only on the lower electrode to form a dielectric layer. An upper metal layer is formed on the resultant structure and is selectively etched to form the first and second terminals(26,27) of the capacitor.
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