Electro-static discharge protection device for integrated circuit inputs

摘要

ESD protection device for integrated circuit includes: A MOS transistor is connected between a supply potential and a ground potential for PD and ND ESD modes. A first-level protection device, such as a field oxide device, has an input terminal coupled to the input pad and an output terminal coupled to the ground potential. The output terminal of the first-level protection device is shared with the MOS transistor for saving layout area. The first-level protection device provides passing the ESD current from the input pad into the MOS transistor when the ground potential is floating.