发明名称 |
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus |
摘要 |
In an MIS field effect transistor having a gate electrode formed on a first semiconductor layer which is a polycrystalline silicon film on an insulating substrate through a gate insulating film, a channel region formed in the semiconductor layer and a source region and a drain region arranged on both sides of the channel region, a thin film semiconductor device has a main orientation of at least the channel region of {110} with respect to the surface of the gate insulating film. Further, a polycrystalline semiconductor film having a main orientation of the surface almost perpendicular to a direction for connecting the source and drain regions of {100} is preferably used in the channel of a semiconductor device. According to the present invention, a semiconductor device having a high-quality polycrystalline semiconductor film whose grain boundary, grain size and crystal orientation can be controlled and whose film roughness and crystal defects formed by crystallization have been reduced can be obtained on the insulating substrate.
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申请公布号 |
US6756614(B2) |
申请公布日期 |
2004.06.29 |
申请号 |
US20010791853 |
申请日期 |
2001.02.26 |
申请人 |
HITACHI, LTD. |
发明人 |
HATANO MUTSUKO;YAMAGUCHI SHINYA;KIMURA YOSHINOBU;PARK SEONG-KEE |
分类号 |
H01L29/786;C30B1/00;H01L21/00;H01L21/20;H01L21/26;H01L21/324;H01L21/336;H01L21/36;H01L21/42;H01L21/44;H01L21/4763;H01L21/477;H01L21/84;H01L23/62;H01L27/01;H01L27/12;H01L31/0328;H01L31/0336;H01L31/0392;H01L31/072;H01L31/109;(IPC1-7):H01L31/072;H01L31/032;H01L31/033 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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