发明名称 Synchronous type semiconductor memory device
摘要 A synchronous type semiconductor device which inputs/outputs data with respect to a host includes a memory circuit, command decoder and CAS latency setting circuit. The command decoder decodes a command control signal input from the host in synchronism with a clock input from the host and outputs the decoded command to the memory circuit. The command includes a read command and mode register set command. The CAS latency setting circuit sets CAS latency in a read cycle based on a predetermined command output from the command decoder and a function control signal input from the host. The predetermined command is a command other than the mode register set command.
申请公布号 US6757214(B2) 申请公布日期 2004.06.29
申请号 US20030443439 申请日期 2003.05.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAWAGUCHI KAZUAKI;OHSHIMA SHIGEO;WATANABE NOBUO;OGAWA YOSHINORI
分类号 G11C11/401;G11C7/10;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
代理机构 代理人
主权项
地址