发明名称 RAPID THERMAL PROCESSING APPARATUS TO OVERCOME DISADVANTAGE OF CIRCULAR CHAMBER AND QUADRILATERAL CHAMBER WHILE MAINTAINING ADVANTAGE THEREOF
摘要 PURPOSE: A rapid thermal processing apparatus is provided to overcome the disadvantage of a circular chamber and a quadrilateral chamber while maintaining the advantage thereof by making the cross section of the inner surface of the chamber have a multi line type composed of a plurality of arcs and straight lines connecting the plurality of arcs. CONSTITUTION: A process gas injecting hole is formed on one sidewall of a chamber(100) and a process gas exhausting hole(130) is formed on a sidewall of the chamber opposite to the one sidewall. A heat source unit heats a wafer, installed in the chamber. A quartz window(200) is installed in the chamber to be positioned under the heat source unit. An edge ring support unit is installed in the chamber to be positioned under the quartz window. The wafer is settled on the upper surface of an edge ring(400) installed on the edge ring support unit. The cross section of the inner surface(110) of the chamber is a multi line type composed of a plurality of arcs and straight lines. The plurality of arcs have the same radius and center, separated from each other. The straight lines connect the arcs.
申请公布号 KR100439276(B1) 申请公布日期 2004.06.28
申请号 KR20030083692 申请日期 2003.11.24
申请人 KORNIC SYSTEMS CORP. 发明人 NAM, WON SIK
分类号 H01L21/324;H01L21/00;(IPC1-7):H01L21/324 主分类号 H01L21/324
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