METHOD FOR FORMING BOTTOM ANTI-REFLECTIVE COATING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a BARC(bottom anti-reflective coating) of a semiconductor device is provided to form a fine trench of a uniform critical dimension by forming a uniform thickness of a BARC layer while completely burying an anti-reflective coating material in a via hole regardless of a hole pattern density. CONSTITUTION: A semiconductor substrate(101) is prepared in which a via hole(103) of a predetermined pattern is formed in an interlayer dielectric(102). The via hole is buried by polymer(104). A BARC layer(105) of a predetermined thickness is formed on the interlayer dielectric while the residual space of the via hole is completely buried by the BARC layer and the polymer buried in the via hole.