发明名称 SEMICONDUCTOR DEVICE WITH NORMALLY OPERATED SURGE PROTECTION CIRCUIT
摘要 PURPOSE: A semiconductor device is provided to operate normally a surge protection circuit by forming differently the first and second npn transistors. CONSTITUTION: A surge protection circuit(51) is electrically connected to a signal input terminal(34). The surge protection circuit includes a first transistor(32) and a second transistor(33). The first and second transistors include first and second bases, respectively. The narrowest region of the first base has a different width from that of the second base, so that the first transistor is more apt to reach breakdown than the second transistor.
申请公布号 KR20040054486(A) 申请公布日期 2004.06.25
申请号 KR20030075768 申请日期 2003.10.29
申请人 KYOEI SANGYO CO., LTD.;RENESAS TECHNOLOGY CORP. 发明人 YAMAMOTO FUMITOSHI;MURAI YASUFUMI;FURUYA KEIICHI
分类号 H01L21/331;H01L21/822;H01L21/8222;H01L21/8228;H01L23/62;H01L27/02;H01L27/04;H01L27/06;H01L27/082;H01L29/732;H02H7/20;H02H9/00;(IPC1-7):H01L27/04 主分类号 H01L21/331
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