发明名称 |
SEMICONDUCTOR DEVICE WITH NORMALLY OPERATED SURGE PROTECTION CIRCUIT |
摘要 |
PURPOSE: A semiconductor device is provided to operate normally a surge protection circuit by forming differently the first and second npn transistors. CONSTITUTION: A surge protection circuit(51) is electrically connected to a signal input terminal(34). The surge protection circuit includes a first transistor(32) and a second transistor(33). The first and second transistors include first and second bases, respectively. The narrowest region of the first base has a different width from that of the second base, so that the first transistor is more apt to reach breakdown than the second transistor.
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申请公布号 |
KR20040054486(A) |
申请公布日期 |
2004.06.25 |
申请号 |
KR20030075768 |
申请日期 |
2003.10.29 |
申请人 |
KYOEI SANGYO CO., LTD.;RENESAS TECHNOLOGY CORP. |
发明人 |
YAMAMOTO FUMITOSHI;MURAI YASUFUMI;FURUYA KEIICHI |
分类号 |
H01L21/331;H01L21/822;H01L21/8222;H01L21/8228;H01L23/62;H01L27/02;H01L27/04;H01L27/06;H01L27/082;H01L29/732;H02H7/20;H02H9/00;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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