发明名称 CHEMICAL MECHANICAL POLISHING EQUIPMENT AND SLURRY SUPPLY APPARATUS THEREOF
摘要 PURPOSE: A CMP(Chemical Mechanical Polishing) equipment and a slurry supply apparatus thereof are provided to uniformly polish a wafer by using at least one movable nozzle. CONSTITUTION: A CMP equipment is provided with a platen(2) for being attached with a polishing pad(4), a conditioner(16) installed on the platen for conditioning the polishing pad, and a polishing head(12) installed at the upper portion of the resultant structure for loading a wafer and pressurizing the wafer downward. The CMP equipment further includes a slurry supply apparatus(20) for supplying slurry from at least one position to the wafer. At this time, the slurry supply apparatus includes at least one movable nozzle(22).
申请公布号 KR20040054254(A) 申请公布日期 2004.06.25
申请号 KR20020081101 申请日期 2002.12.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUN, CHAN UN;JUNG, MYEONG JIN
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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