| 摘要 |
PURPOSE: A flash memory with low operation voltage and a manufacturing method thereof are provided to simultaneously form a flash memory and a logic circuit at one chip by forming an ion trap region on a gate oxide layer. CONSTITUTION: A flash memory with low operation voltage is provided with a semiconductor substrate(11), a gate oxide layer(12) formed on the semiconductor substrate, a floating gate(13) formed on the gate oxide layer, a dielectric layer(14) formed on the floating gate, and a control gate(15) formed on the dielectric layer. At this time, an ion trap region(16) is formed at the gate oxide layer. The flash memory further includes a spacer(18) formed at both sidewalls of the floating gate and control gate, an LDD(Lightly Doped Drain)(17) formed at the lower portion of the spacer in the semiconductor substrate, and a source/drain region(19) connected with the LDD in the semiconductor substrate.
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