| 摘要 |
There is provided a base material for lithography that is capable of achieving superior film formation characteristics, while maintaining good light absorption characteristics. The base material for lithography comprises (a) a cross linking agent formed from a specific nitrogen containing compound, (b) a copolymer comprising two types of (meth)acrylate ester units as represented by the general formulas (1) and (2) shown below, and (c) an organic solvent: wherein, R<1 >represents a hydroxyl group or a carboxyl group or the like, and X represents an alkyl chain of 1 to 4 carbon atoms; and wherein, R<2 >represents a hydroxyl group or a carboxyl group or the like, Y represents -SO2-, -CO- or -SO-; and n represents a number from 1 to 4.
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