| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device for a long wavelength region, which suppresses the overflow of a carrier and which is constituted so that an aspect ratio becomes small. SOLUTION: The semiconductor laser device 10 is provided with a lamination structure wherein an n-type lower clad layer 14, an optical guide layer 16, an active layer 18 of Ga<SB>1-y</SB>In<SB>y</SB>N<SB>z</SB>As<SB>1-z</SB>(0<y≤1, 0<z≤1), another optical guide layer 20, a p-type upper clad layer 22 and a GaAs contact layer 24 which is p-type and high in the concentration of impurities, are laminated on an n-type GaAs substrate 12. The lower clad layer is constituted of an Al<SB>0.30</SB>Ga<SB>0.70</SB>As lower bottom clad layer 14A having a refractive index of n<SB>3</SB>, a GaAs lower intermediate clad layer 14B having a refractive index of n<SB>2</SB>, and an Al<SB>0.47</SB>Ga<SB>0.53</SB>As lower upper layer clad layer 14C having a refractive index of n<SB>1</SB>. The upper clad layer is the same. A ratio between refractive indexes is lowered as shown in the following order: the refractive index:n<SB>2</SB>of the lower intermediate clad layer 14B, the refractive index:n<SB>3</SB>of the lower upper layer clad layer 14C, and the refractive index:n<SB>1</SB>of the lower bottom clad layer 14A. The upper clad layer is the same. COPYRIGHT: (C)2004,JPO
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