发明名称 Doping method and semiconductor device fabricated using the method
摘要 A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
申请公布号 US2004121567(A1) 申请公布日期 2004.06.24
申请号 US20030655041 申请日期 2003.09.05
申请人 NAT'L INST. OF ADVAN. INDUSTRIAL SCIENCE AND TECH.;NEC CORPORATION 发明人 KANAYAMA TOSHIHIKO;MIYAZAKI TAKEHIDE;HIURA HIDEFUMI
分类号 H01L21/28;H01L21/225;H01L21/336;H01L29/78;(IPC1-7):H01L21/04;H01L21/425 主分类号 H01L21/28
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