发明名称 |
Doping method and semiconductor device fabricated using the method |
摘要 |
A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
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申请公布号 |
US2004121567(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20030655041 |
申请日期 |
2003.09.05 |
申请人 |
NAT'L INST. OF ADVAN. INDUSTRIAL SCIENCE AND TECH.;NEC CORPORATION |
发明人 |
KANAYAMA TOSHIHIKO;MIYAZAKI TAKEHIDE;HIURA HIDEFUMI |
分类号 |
H01L21/28;H01L21/225;H01L21/336;H01L29/78;(IPC1-7):H01L21/04;H01L21/425 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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