发明名称 MANUFACTURING METHODS FOR SEMICONDUCTOR SHEET AND SEMICONDUCTOR DEVICE, AND LASER PROCESSING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a technique for supressing impurities segregation, when a laser beam is irradiated to reform crystallization or crystallizability of a semiconductor sheet. SOLUTION: This invention is for irradiation of a laser beam, while giving supersonic vibrations with the periphery of a substrate being held, when the laser beam is irradiated to a semiconductor sheet formed on the substrate. The substrate, on which the semiconductor sheet is formed, is held on a stage where a hole is provided, and a gas is blown out of the hole to make the substrate levitate and irradiate with the laser beam, while giving supersonic vibrations with the periphery of the substrate being held, thus giving the supersonic vibration more efficiently. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179653(A) 申请公布日期 2004.06.24
申请号 JP20030387256 申请日期 2003.11.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ARAO TATSUYA;YAMAZAKI SHUNPEI
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
代理机构 代理人
主权项
地址