| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for selectively forming aluminum wiring within a contact hole or groove of a semiconductor substrate. SOLUTION: An intermediate layer which includes nitrogen is formed on the upper part of the interior surface of the contact hole or groove and on the upper part of the main surface of the semiconductor substrate (301). A first surface portion of the intermediate layer which is located on the upper part of the main surface of the semiconductor substrate is treated with plasma to form a passivity layer located at the first surface portion of the intermediate layer (302). Then, without an intervening vacuum break, an aluminum film is deposited with chemical vapor only over a second surface portion of the intermediate layer, which is located over the interior surface of the contact hole or recess (303). The plasma treatment of the first surface portion of the intermediate layer prevents the chemical vapor deposition of the aluminum film 110 on the upper part of the first surface portion of the intermediate layer. Consequently, additionally depositing an insulating film on a metal deposition preventing film is not needed, and then the productivity of an aluminum wiring process can be improved due to proceeding the aluminum wiring process without the intervening vacuum break during the process. COPYRIGHT: (C)2004,JPO
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