Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same

摘要

In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. Therefore, for a specified type of circuit elements, the characteristics of the corresponding isolation trenches may be tailored to achieve an optimum device performance.