RE-CRYSTALLIZATION OF SEMICONDUCTOR SURFACE FILM AND DOPING OF SEMICONDUCTOR BY ENERGETIC CLUSTER IRRADIATION

摘要

Method of gas-cluster ion beam 128 processing of damaged semiconductor films 308 for re-crystallization and/or for activating a dopant in a semiconductor film 308 with reduced dopant diffusion, and semiconductor devices formed using the method. The method is useful, for example, for restoring crystallinity and/or for electrically activating a dopant species after shallow dopant ion implantation for forming shallow junctions. In one embodiment of the method, dopant atoms incorporated into the gas-clusters produces shallow doping of a semiconductor 302 with simultaneous electrical activation of the dopant atoms and re-crystallization of the semiconductor.