| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin non-lead type semiconductor device with good packaging performance. <P>SOLUTION: The main surface of a conductive substrate is provided with recesses and grooves in a predetermined pattern. A plurality of compartment parts surrounded with the recesses and grooves are formed, and a plurality of product formation parts are formed of one or a plurality of recesses and a plurality of compartment parts. After that, a semiconductor element is secured onto the bottom of the recess of each product formation part by an adhesive material through the rear face of the semiconductor element, and each electrode of the semiconductor element and the compartment part are connected by conductive wires. An insulating resin layer is formed on the main surface of the substrate in such a manner as to cover the semiconductor element and the wires. The rear face of the substrate is removed by a predetermined thickness, so as to electrically isolate each compartment part and make each independent, and the adhesive material is exposed. A plating film is formed on the surface of the compartment part exposed on the surface of the resin layer, and the resin layer is cut at the boundary part of the product formation part to manufacture a plurality of non-lead type semiconductor devices. By this method, the thin semiconductor device with the rear face of the semiconductor element lower than the main surface of the compartment part can be manufactured. <P>COPYRIGHT: (C)2004,JPO |
