| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a semiconductor device is deteriorated in properties of transmitting high-frequency electric signals due to reflections or the like, where the semiconductor device is composed of a semiconductor element transmitting/receiving high-frequency electric signals and a package housing the semiconductor element airtightly. SOLUTION: The semiconductor element housing package 7 is composed of a base 1, grounding conductors 2b and a first wiring conductor 2a formed on the base 1, grounding pads 3b and an input/output pad 3a electrically connected to the grounding conductors 2b and the first wiring conductor 2a respectively, a second wiring conductor 4 formed on the base 1, and a connector 5 electrically connected to the second wiring conductor 4. The semiconductor element 6 transmitting/receiving high-frequency electric signals is mounted in the semiconductor element housing package 7 for the formation of the semiconductor device. The electrodes of the semiconductor element 6 are electrically connected to the grounding wiring conductors 2b, the first wiring conductor 2a, and the second wiring conductor 4 with bonding wires 8a and 8b. The bonding wire 8b connecting the second wiring conductor 4 to the electrode of the semiconductor element 6 is set at 0.3mm or below in length. COPYRIGHT: (C)2004,JPO |
