发明名称 |
DAMASCENE GATE PROCESS WITH SACRIFICIAL OXIDE IN SEMICONDUCTOR DEVICES |
摘要 |
<p>A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and forming a gate structure over a channel portion of the fin structure. The method may also include forming a sacrificial oxide layer around the gate structure and removing the gate structure to define a gate recess within the sacrificial oxide layer. A metal gate may be formed in the gate recess, and the sacrificial oxide layer may be removed.</p> |
申请公布号 |
WO2004053963(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
WO2003US34773 |
申请日期 |
2003.10.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AHMED, SHIBLY, S.;WANG, HAIHONG;YU, BIN |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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