发明名称 |
Ferroelectric thin film and method for forming the same |
摘要 |
A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
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申请公布号 |
US2004121492(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20030704745 |
申请日期 |
2003.11.12 |
申请人 |
LEE YONG-KYUN;PARK YOUNG-SOO;LEE JUNE-KEY |
发明人 |
LEE YONG-KYUN;PARK YOUNG-SOO;LEE JUNE-KEY |
分类号 |
C04B35/491;C01G23/00;C01G25/00;H01B3/00;H01B3/12;H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):B05D5/12;B05D3/02;H01L21/00 |
主分类号 |
C04B35/491 |
代理机构 |
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代理人 |
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