发明名称 |
Methods of fabricating multiple sets of field effect transistors |
摘要 |
The invention includes methods of fabricating multiple sets of field effect transistors. In one implementation, an etch stop layer is formed over an insulative capping layer which is formed over a conductive gate layer formed over a substrate. The etch stop layer, the insulative capping layer, and the conductive gate layer are patterned and etched to form a first set of conductive gate constructions over the substrate. A dielectric material is formed and planarized over the first set of gate constructions. Thereafter, the insulative capping layer and the conductive gate layer are patterned and etched to form a second set of conductive gate constructions over the substrate. Other aspects and implementations are contemplated.
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申请公布号 |
US2004121548(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20020323453 |
申请日期 |
2002.12.18 |
申请人 |
FISHBURN FRED D.;ROBERTS MARTIN CEREDIG |
发明人 |
FISHBURN FRED D.;ROBERTS MARTIN CEREDIG |
分类号 |
H01L21/8234;H01L21/8238;(IPC1-7):H01L21/336;H01L21/302 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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