| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure a long refresh cycle time by securing long data maintain period even when there is certain current leakage from a memory cell. <P>SOLUTION: Memory cells 11 to 15 and 2 are connected to a word line WL. Information memory cells 10 to 15 are connected through bit lines 1 to 5 to one of the input terminals of one of respective sense amplifiers SA1 to SA5. In another memory cell 2, reference information equivalent to an information read reference potential is stored, and this reference information is inputted through a bit line bit 7 to the other input terminals of the respective sense amplifiers SA1 to SA5 in common. Thus, even when the potential of a signal charge stored in each of the information memory cells 11 to 15 is lowered due to a leaked current, the potential of a signal charge stored in the memory cell 2 for storing the information of the reference potential is also lowered accordingly, and hence time until the potential difference therebetween reaches a sense limit is extended, and data maintain period is kept for a longer period. <P>COPYRIGHT: (C)2004,JPO |
