| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device wherein a parasitic capacitance between metallic films and short-circuit between the metallic films are restrained. SOLUTION: A first wiring line 203, a diffusion prevention film 205 and a second insulating film 207 are formed on a substrate in order, and a sacrificial film 213 is formed in an upper surface of the second insulating film 207. A connection hole 211 and a wiring groove 217 are formed and a barrier metal film 219 and a copper film 221 are formed on the sacrificial film 213. CMP for removing an unnecessary part of the copper film 221 and the barrier metal film 219 is carried out by two steps of primary polishing for stopping polishing in the surface of the barrier metal film 219 and second polishing for polishing the remaining barrier metal film 219 and the tapered sacrificial film 213. COPYRIGHT: (C)2004,JPO
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