METHOD OF PRODUCING AN N-TYPE DIAMOND WITH HIGH ELECTRICAL CONDUCTIVITY

摘要

The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor (12), in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.