| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetoresistive effect element that is reduced in power consumption and is excellent in thermal stability, and to obtain a magnetic memory. SOLUTION: The magnetoresistive effect element is provided with a tunnel barrier layer 4, a first ferromagnetic layer 5 which is provided on one side of the barrier layer 4 and becomes a magnetization fixing layer, and a second ferromagnetic layer 3a which is provided on the other side of the barrier layer 4. The element is also provided with a third ferromagnetic layer 3c which is formed on one side of the second ferromagnetic layer 3a opposite to the barrier layer 4 and has a wider film surface area than the second layer 3a has, and the direction of magnetization of which can be inverted by an external magnetic field; and a magnetization free layer 3 provided between the second and the third ferromagnetic layers 3a and 3c and having an intermediate layer 3b which transmits the magnetization inversion of the third layer 3c to the second layer 3a. The second and the third ferromagnetic layers 3a and 3c are magnetically coupled with each other through the intermediate layer 3b. COPYRIGHT: (C)2004,JPO
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