| 摘要 |
A gate oxide film is formed on a substrate. A polysilicon film is formed on the gate oxide film. A ruthenium film is formed as a mask material on the polysilicon film. A resist pattern is formed on the ruthenium film. After the ruthenium film is patterned using the resist pattern as a mask, a the patterned ruthenium film is shrunk. After the polysilicon film is patterned using a shrunk the shrunken ruthenium film, the shrunk shrunken ruthenium film is removed.
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