| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for producing an ultra-thin semiconductor device, having a thickness of, for example, about 1 to 10μm, which is thinner than the conventional thickness of 50μm. SOLUTION: In the method of producing the ultra-thin semiconductor device; a low-porosity Si layer 21, a high-porosity Si layer 22, a low-porosity Si layer 23, and a single-crystal Si layer 24 are formed on a seed substrate 20; a low-porosity Si layer 26, a high-porosity Si layer 27, a low-porosity Si layer 28, a single-crystal Si layer 29, and an insulating layer 30 are formed on a supporting substrate 25; the seed substrate 20 is stuck together with the supporting substrate 25 on a face where the insulating layer 30 is formed; the seed substrate 20 is separated from the high-porosity Si layer 22 on the substrate 20; the surface of the single-crystal Si layer 24 is etched and planarized by a hydrogen annealing treatment; a semiconductor device and a protruding bump electrode are formed in the single-crystal Si layer 24; a cut groove is formed inside a scribing line, until at least up to the high-porous Si layer 27; and then the surface of the single-crystal Si layer 24 is protected using a conductive UV-irradiation curing tape, without adhesive remaining and the support substrate 25 is separated from the high-porosity Si layer 27. COPYRIGHT: (C)2004,JPO
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