METHOD FOR FORMING GaN NANO ROD USING HVPE GROWTH

摘要

PURPOSE: A method for forming a GaN nano rod using an HVPE(Hydride Vapor Phase Epitaxial) growth is provided to be capable of regularly arraying GaN nano rods in high density and improving the degree of integration. CONSTITUTION: A plurality of GaN nano rods(120) are formed on a substrate(10) by reacting GaClx gas to NH3 gas at the temperature of 400-600 °C. Preferably, the reaction is carried out for 30 minutes to 10 hours. Preferably, the GaClx gas is capable of being generated by reacting Ga to HCl gas. At this time, the GaClx gas is generated at the temperature of 600-900 °C.