SEMICONDUCTOR ARRANGEMENT COMPRISING TRANSISTORS BASED ON ORGANIC SEMICONDUCTORS AND NON-VOLATILE READ-WRITE MEMORY CELLS

摘要

Semiconductor arrangement comprises a semiconductor device having a semiconductor path made from an organic semiconductor and a rewritable storage cell based on the ferroelectric effect in a storage material. Preferably the storage material is an organic polymer having ferroelectric properties or an inorganic material having ferroelectric properties. The organic polymer is a fluorinated polyene, preferably a poly vinylidene fluoride. The inorganic material is a ferroelectric titanate or tantalate.