发明名称 |
DUAL-DAMASCENE INTERCONNECTS WITHOUT AN ETCH STOP LAYER BY ALTERNATING ILDS |
摘要 |
<p>A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.</p> |
申请公布号 |
EP1430525(A2) |
申请公布日期 |
2004.06.23 |
申请号 |
EP20020768930 |
申请日期 |
2002.09.27 |
申请人 |
INTEL CORPORATION |
发明人 |
WONG, LAWRENCE;MORROW, PATRICK;LEU, JIHPERNG;OTT, ANDREW;KLOSTER, GRANT |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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