发明名称 DUAL-DAMASCENE INTERCONNECTS WITHOUT AN ETCH STOP LAYER BY ALTERNATING ILDS
摘要 <p>A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.</p>
申请公布号 EP1430525(A2) 申请公布日期 2004.06.23
申请号 EP20020768930 申请日期 2002.09.27
申请人 INTEL CORPORATION 发明人 WONG, LAWRENCE;MORROW, PATRICK;LEU, JIHPERNG;OTT, ANDREW;KLOSTER, GRANT
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址
您可能感兴趣的专利