| 摘要 |
PURPOSE: A semiconductor memory device for selectively switching X16 and X8 mode is provided to improve package yield by switching a mode of an X16 package to an X8 mode in which the semiconductor is operated in low frequency relatively when the X16 package is not operated in high speed testing. CONSTITUTION: An X8 mode control circuit comprises an antifuse circuit(30) of which an output is determined according to a fusing of an antifuse, a differential amplifier(10) for level-shifting an output signal of the antifuse circuit(30), and a driver(20) for amplifying an output signal of the differential amplifier(10). The antifuse circuit(30) includes a PMOS(P-channel Metal Oxide Semiconductor) transistor(P1) for supplying a source voltage to an output node(nd0) in response to a power-up signal, a PMOS transistor(P2) for supplying a source voltage to the output node(nd0) in response to an antifuse fusing mode signal, an antifuse(AF) connected between the output mode(nd0) and a substrate voltage terminal(vbbf), and a PMOS transistor(P3) that is connected between the output node(nd0) and the antifuse(AF) to function as a resistor. The differential amplifier(10) is a level shifter for amplifying a level of the output signal of the antifuse circuit(30). The driver(20) is made of two inverters that are connected in serial.
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