METHOD FOR MANUFACTURING CAPACITOR HAVING STACK DIELECTRIC LAYER MADE OF ALUMINA LAYER AND HfO2 LAYER

摘要

PURPOSE: A method for manufacturing a capacitor having a stack dielectric layer made of an alumina layer and an HfO2 layer is provided to remove the deoxidized metal between the alumina and HfO2 layer by carrying out a plasma treatment. CONSTITUTION: A lower electrode made of a polysilicon layer is formed on a predetermined structure(S1). An alumina layer is formed on the lower electrode(S3). A thin HfO2 layer is firstly deposited on the alumina layer(S4). A plasma treatment is carried out on the resultant structure for removing the deoxidized metal between the alumina layer and the thin HfO2 layer(S5). A thick HfO2 layer is secondly deposited on the thin HfO2 layer(S6). A post heat treatment is carried out on the resultant structure at a high temperature for securing dielectric characteristics(S7). An upper electrode is formed on the thick HfO2 layer(S8).