| 摘要 |
An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-injected layer on the polysilicon layer, a tungsten nitride layer on the silicon-injected layer, a tungsten nitride layer 5 formed on the silicon-injected layer 6, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon germanium layer.
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