| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element which minimizes TED (Transient Enhanced Diffusion) phenomenon of impurities which is generated in heat treatment process and other successive heat treatment processes for relaxing damage due to ion implantation and prevents lowering of upper film quality caused by outgassing. SOLUTION: The method comprises a step for providing a semiconductor substrate wherein a prescribed process is carried out for forming a semiconductor element and a step for forming an ion implantation layer 105 by injecting trivalent impurities having a larger atomic weight than that of boron and consisting of a single atom to a prescribed depth of the semiconductor substrate by an ion implantation process. COPYRIGHT: (C)2004,JPO
|
