| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent the edge moat of the isolation layer by maximizing the corner rounding of a trench using an annealing process. CONSTITUTION: An ion implantation portion is formed in a semiconductor substrate(100) by using a pad nitride and an oxide layer(140a,120) as a mask. A spacer is formed at both sidewalls of the pad nitride and the oxide layer. At this time, the ion implantation portion is removed for exposing the substrate. A trench is formed by etching the exposed substrate. The spacer is removed from the resultant structure. An annealing process is carried out on the entire surface of the resultant structure. An oxide layer(260) is formed on the surface of the trench. Then, an isolation layer is formed in the trench.
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