| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor for forming a gate electrode having good pattern form by forming a resist pattern having a good pattern form and etching a base film using the resist pattern. SOLUTION: The resist pattern 8 is formed on a multilayer film comprising a wiring layer 3 which is formed on a semiconductor substrate 1. A portion of the multilayer film is etched using the resist pattern 8 as a mask to form the gate electrode on the semiconductor substrate 1. The etching of the portion of the multilayer film is carried out after the resist pattern 8 is etched without the application of a bias electric current using an etching gas which has been made plasmatic. COPYRIGHT: (C)2004,JPO |
