| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology which safely removes hydrogen in an exhaust gas discharged from a gas treatment apparatus in a gas treatment process of a semiconductor wafer using hydrogen. <P>SOLUTION: After a gate electrode of poly-metal structure is formed on a gate oxide film, a mixing ratio of hydrogen gas/oxygen gas is controlled to be a partial pressure ratio in the range of a partial pressure ratio of water vapor/ hydrogen where each oxidation reduction reaction of metal and silicon is equilibrated, and the hydrogen containing water vapor is produced by catalysis. The hydrogen containing water vapor is supplied to a main surface of a semiconductor wafer 1A heated at a predetermined temperature or to its neighborhood to improve a profile of the side wall end of the gate electrode, then, the water is produced by reacting the hydrogen contained in the exhaust gas after oxidation treatment and the oxygen introduced from outside through catalysis, and discharged. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004172623(A) |
申请公布日期 |
2004.06.17 |
| 申请号 |
JP20030387022 |
申请日期 |
2003.11.17 |
| 申请人 |
RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC |
发明人 |
TANABE YOSHIKAZU;NAGAHAMA HISAAKI;KASHU NOBUYOSHI;NAKATSUKA YASUHIKO |
| 分类号 |
H01L21/28;H01L21/31;H01L21/316;H01L21/322;H01L21/8234;H01L21/8242;H01L27/088;H01L27/108;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
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