发明名称 |
Method for depositing a metal layer on a semiconductor interconnect structure |
摘要 |
Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a dielectric layer. The dielectric layer is patterned so as to expose the metal conductor. A liner layer is then deposited into the pattern. The liner layer is then argon sputter etched to remove the liner layer and expose the metal conductor. In the process of argon sputter etching, the liner layer is redeposited onto the sidewall of the pattern. Lastly, an additional layer is deposited into the pattern and covers the redeposited liner layer.
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申请公布号 |
US2004115928(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20020318605 |
申请日期 |
2002.12.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MALHOTRA SANDRA G.;SIMON ANDREW HERBERT |
分类号 |
H01L;H01L21/28;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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