发明名称 Plasma processing apparatus and method
摘要 A method for determining the potential of a plasma in a processing chamber includes determining voltages of respective plasma engaging surfaces of at least two plasma generating electrodes disposed within the processing chamber and determining the plasma potential by comparing the determined voltages and equating the highest determined voltage to the plasma potential.
申请公布号 US2004112536(A1) 申请公布日期 2004.06.17
申请号 US20030721413 申请日期 2003.11.26
申请人 TOKYO ELECTRON LIMITED 发明人 QUON BILL H
分类号 H01J37/32;H01L21/306;H05H1/46;(IPC1-7):H01L21/306 主分类号 H01J37/32
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