发明名称 Memory system having two-way ring topology and memory device and memory module for ring-topology memory system
摘要 A memory system, memory module and memory device are described. The memory system includes a plurality of the memory modules connected in a series configuration on a first signal path. The first signal path and a second signal path carry memory control and data signals between the memory modules and a memory controller. The memory controller transmits and receives the control signals and data signals on the first and second signal paths. The first and second signal paths are connected together such that the memory modules are connected in a ring configuration. The control signals and data signals travel in opposite directions on the first and second signal paths. The first and second signal paths are shared by both the data signals and the control signals. The memory modules include multi-functional ports, each of which can receive both the control signals and the data signals and re-drive the signals onto the connected signal paths. The memory device in accordance with the invention can include multi-functional conductors or pins which can both receive and re-drive both the control signals and the data signals.
申请公布号 US2004117569(A1) 申请公布日期 2004.06.17
申请号 US20030347733 申请日期 2003.01.21
申请人 KYUNG KYE-HYUN 发明人 KYUNG KYE-HYUN
分类号 G06F13/42;G11C7/10;(IPC1-7):G06F12/00 主分类号 G06F13/42
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