发明名称 Floating gate transistors
摘要 A method of shifting the effective thresholds of a UV-activated floating gate P-MOS transistor and a UV-activated floating gate N-MOS transistor connected in series between the power supply rails of a circuit, the method comprising the steps of: applying a voltage equal to half the sum of the desired negative and positive power supply voltages to all inputs of the transistor arrangement; applying a negative offset voltage to the positive power supply rail and a positive voltage to the negative power supply rail; applying UV light to the transistors until the floating gate voltages of each transistor reach the respective applied offset voltages; and applying the desired power supply voltages to the appropriate power supply rails.
申请公布号 AU7778798(A) 申请公布日期 1998.12.21
申请号 AU19980077787 申请日期 1998.06.02
申请人 YNGVAR BERG;TOR SVERRE LANDE 发明人 TOR SVERRE LANDE
分类号 G11C27/00 主分类号 G11C27/00
代理机构 代理人
主权项
地址