RINSE LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING SAME

摘要

A rinse liquid for lithography enables highly reproducible formation of especially a resist pattern with a high aspect ratio by preventing separation or collapse of the resist pattern. A method for forming a pattern using such a rinse liquid is also disclosed. The rinse liquid for lithography contains water and a nonionic surfactant having an ethyleneoxy group and not having a fluorine atom. The method for forming a resist pattern comprises a step in which a developed resist pattern is rinsed using the rinse liquid for lithography.