| 摘要 |
A process for structuring dielectric layers on a semiconductor substrate by: (i) deposition of a dielectric layer (DL) on a first layer, and a photosensitive resist layer on the DL; (ii) exposure and development of the resist layer to give resist mask; (iii) erosion of the DL to expose the first layer; (iv) incineration (sic) of the resist mask in an oxygen plasma at less than 200degreesC, so that a structured DL is obtained, which is etched with dilute aqueous hydrofluoric acid. A process for structuring DL on a semiconductor substrate with at least the steps:preparation of a first layer, deposition of at least one DL on the first layer; deposition of a photosensitive resist layer on the DL;sectionwise light exposure and development of the resist layer so that a resist mask is obtained, thru which sections the DL is exposed;erosion of the DL in the sections exposed via the resist mask to at least a depth such that the first layer is exposed, incineration (sic) of the resist mask in an oxygen plasma at a temperature below 200degreesC, where the oxygen plasma is obtained from a gas mixture containing at least oxygen and forming gas (sic), where the proportion of oxygen gas is less than 60 vol.% and of forming gas more than 40 vol.%, so that a structured dielectric layer is obtained;and cleaning of the structured dielectric layer with dilute aqueous hydrofluoric acid.
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