| 摘要 |
PURPOSE: A method for forming a metal line using a dual damascene process is provided to simplify the process by sequentially depositing a via oxide layer, a nitride layer for an etch stop layer, an oxide layer for an upper metal line in a chamber by in-situ. CONSTITUTION: An interlayer dielectric(2) with a lower metal line(3) is formed on a semiconductor substrate(1). The first oxide layer(5), a nitride layer(6), and the second oxide layer(7) are sequentially formed on the resultant structure by in-situ. A via hole is formed for exposing the lower metal line by selectively etching the resultant structure. A trench is formed by selectively etching the second oxide layer using the nitride layer as an etch stop layer. An upper metal line(8) is formed by filling the via hole and trench using a metal layer.
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