| 摘要 |
PURPOSE: A quantum dot light-emitting device and a fabricating method thereof are provided to control a characteristic of a light-emitting device by controlling the size and the density of quantum dot. CONSTITUTION: A quantum dot light-emitting device includes a substrate, an n-type semiconductor, an insulating layer, a quantum dot, and a p-type semiconductor layer. The n-type semiconductor(12) is formed on an upper surface of the substrate(11). The insulating layer(13) including a plurality of nano-holes(131) are formed on an upper surface of the n-type semiconductor. A quantum dot(132) is formed by filling up the inside of the nano-holes. The p-type semiconductor layer(14) is formed on an upper surface of the insulating layer. |
